726 lines
26 KiB
C
726 lines
26 KiB
C
#include "nand.h"
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//#include "delay.h"
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#include "stdlib.h"
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#include "debug.h"
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#define printf DBG_LOG
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#define delay_ms HAL_Delay
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//////////////////////////////////////////////////////////////////////////////////
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//本程序只供学习使用，未经作者许可，不得用于其它任何用途
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//ALIENTEK STM32H7开发板
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//NAND驱动代码
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//正点原子@ALIENTEK
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//技术论坛:www.openedv.com
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//创建日期:2017/8/16
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//版本：V1.0
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//版权所有，盗版必究。
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//Copyright(C) 广州市星翼电子科技有限公司 2014-2024
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//All rights reserved
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//////////////////////////////////////////////////////////////////////////////////
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NAND_HandleTypeDef NAND_Handler; //NAND FLASH句柄
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nand_attriute nand_dev; //nand重要参数结构体
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//初始化NAND FLASH
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u8 NAND_Init(void)
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{
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FMC_NAND_PCC_TimingTypeDef ComSpaceTiming,AttSpaceTiming;
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//NAND_MPU_Config();
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NAND_Handler.Instance=FMC_NAND_DEVICE;
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NAND_Handler.Init.NandBank=FMC_NAND_BANK3; //NAND挂在BANK3上
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NAND_Handler.Init.Waitfeature=FMC_NAND_PCC_WAIT_FEATURE_DISABLE; //关闭等待特性
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NAND_Handler.Init.MemoryDataWidth=FMC_NAND_PCC_MEM_BUS_WIDTH_8; //8位数据宽度
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NAND_Handler.Init.EccComputation=FMC_NAND_ECC_DISABLE; //禁止ECC
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NAND_Handler.Init.ECCPageSize=FMC_NAND_ECC_PAGE_SIZE_512BYTE; //ECC页大小为512字节
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NAND_Handler.Init.TCLRSetupTime=9; //设置TCLR(tCLR=CLE到RE的延时)=(TCLR+TSET+2)*THCLK,THCLK=1/200M=5ns
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NAND_Handler.Init.TARSetupTime=9; //设置TAR(tAR=ALE到RE的延时)=(TAR+TSET+1)*THCLK,THCLK=1/200M=5n。
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ComSpaceTiming.SetupTime=10; //建立时间
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ComSpaceTiming.WaitSetupTime=10; //等待时间
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ComSpaceTiming.HoldSetupTime=10; //保持时间
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ComSpaceTiming.HiZSetupTime=10; //高阻态时间
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AttSpaceTiming.SetupTime=10; //建立时间
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AttSpaceTiming.WaitSetupTime=10; //等待时间
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AttSpaceTiming.HoldSetupTime=10; //保持时间
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AttSpaceTiming.HiZSetupTime=10; //高阻态时间
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HAL_NAND_Init(&NAND_Handler,&ComSpaceTiming,&AttSpaceTiming);
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NAND_Reset(); //复位NAND
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delay_ms(100);
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nand_dev.id=NAND_ReadID(); //读取ID
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printf("NAND ID:%#x\r\n",nand_dev.id);
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NAND_ModeSet(4); //设置为MODE4,高速模式
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if(nand_dev.id==MT29F16G08ABABA) //NAND为MT29F16G08ABABA
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{
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nand_dev.page_totalsize=4320;
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nand_dev.page_mainsize=4096;
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nand_dev.page_sparesize=224;
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nand_dev.block_pagenum=128;
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nand_dev.plane_blocknum=2048;
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nand_dev.block_totalnum=4096;
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}
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else if(nand_dev.id==MT29F4G08ABADA)//NAND为MT29F4G08ABADA
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{
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nand_dev.page_totalsize=2112;
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nand_dev.page_mainsize=2048;
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nand_dev.page_sparesize=64;
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nand_dev.block_pagenum=64;
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nand_dev.plane_blocknum=2048;
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nand_dev.block_totalnum=4096;
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}else return 1; //错误，返回
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return 0;
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}
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//NAND FALSH底层驱动,引脚配置，时钟使能
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//此函数会被HAL_NAND_Init()调用
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void HAL_NAND_MspInit11(NAND_HandleTypeDef *hnand)
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{
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GPIO_InitTypeDef GPIO_Initure;
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__HAL_RCC_FMC_CLK_ENABLE(); //使能FMC时钟
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__HAL_RCC_GPIOD_CLK_ENABLE(); //使能GPIOD时钟
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__HAL_RCC_GPIOE_CLK_ENABLE(); //使能GPIOE时钟
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__HAL_RCC_GPIOC_CLK_ENABLE(); //使能GPIOG时钟
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//初始化PD6 R/B引脚
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GPIO_Initure.Pin = GPIO_PIN_6;
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GPIO_Initure.Mode = GPIO_MODE_AF_PP;
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GPIO_Initure.Pull = GPIO_PULLUP;
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GPIO_Initure.Speed = GPIO_SPEED_FREQ_VERY_HIGH;
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GPIO_Initure.Alternate = GPIO_AF12_FMC;
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HAL_GPIO_Init(GPIOD,&GPIO_Initure);
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//初始化PC8 NCE3引脚
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GPIO_Initure.Pin=GPIO_PIN_8;
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GPIO_Initure.Mode=GPIO_MODE_AF_PP; //输入
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GPIO_Initure.Pull=GPIO_NOPULL; //上拉
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GPIO_Initure.Speed=GPIO_SPEED_FREQ_VERY_HIGH; //高速
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GPIO_Initure.Alternate=GPIO_AF9_FMC; //复用为FMC
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HAL_GPIO_Init(GPIOC,&GPIO_Initure);
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//初始化PD0,1,4,5,11,12,14,15
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GPIO_Initure.Pin=GPIO_PIN_0|GPIO_PIN_1|GPIO_PIN_4|GPIO_PIN_5|\
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GPIO_PIN_11|GPIO_PIN_12|GPIO_PIN_14|GPIO_PIN_15;
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GPIO_Initure.Pull=GPIO_NOPULL;
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HAL_GPIO_Init(GPIOD,&GPIO_Initure);
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//初始化PE7,8,9,10
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GPIO_Initure.Pin=GPIO_PIN_7|GPIO_PIN_8|GPIO_PIN_9|GPIO_PIN_10;
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HAL_GPIO_Init(GPIOE,&GPIO_Initure);
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}
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//配置MPU的region
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void NAND_MPU_Config(void)
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{
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MPU_Region_InitTypeDef MPU_Initure;
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HAL_MPU_Disable(); //配置MPU之前先关闭MPU,配置完成以后在使能MPU
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//配置RAM为region1，大小为256MB，此区域可读写
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MPU_Initure.Enable=MPU_REGION_ENABLE; //使能region
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MPU_Initure.Number=NAND_REGION_NUMBER; //设置region，NAND使用的region4
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MPU_Initure.BaseAddress=NAND_ADDRESS_START; //region基地址
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MPU_Initure.Size=NAND_REGION_SIZE; //region大小
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MPU_Initure.SubRegionDisable=0X00;
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MPU_Initure.TypeExtField=MPU_TEX_LEVEL0;
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MPU_Initure.AccessPermission=MPU_REGION_FULL_ACCESS; //此region可读写
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MPU_Initure.DisableExec=MPU_INSTRUCTION_ACCESS_DISABLE ; //允许读取此区域中的指令
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MPU_Initure.IsShareable=MPU_ACCESS_NOT_SHAREABLE;
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MPU_Initure.IsCacheable=MPU_ACCESS_NOT_CACHEABLE;
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MPU_Initure.IsBufferable=MPU_ACCESS_NOT_BUFFERABLE;
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HAL_MPU_ConfigRegion(&MPU_Initure);
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HAL_MPU_Enable(MPU_PRIVILEGED_DEFAULT); //开启MPU
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}
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//读取NAND FLASH的ID
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//返回值:0,成功;
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// 其他,失败
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u8 NAND_ModeSet(u8 mode)
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{
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*(vu8*)(NAND_ADDRESS|NAND_CMD)=NAND_FEATURE;//发送设置特性命令
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*(vu8*)(NAND_ADDRESS|NAND_ADDR)=0X01; //地址为0X01,设置mode
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NAND_Delay(NAND_TADL_DELAY); //等待tADL
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*(vu8*)NAND_ADDRESS=mode; //P1参数,设置mode
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*(vu8*)NAND_ADDRESS=0;
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*(vu8*)NAND_ADDRESS=0;
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*(vu8*)NAND_ADDRESS=0;
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if(NAND_WaitForReady()==NSTA_READY)return 0;//成功
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else return 1; //失败
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}
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//读取NAND FLASH的ID
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//不同的NAND略有不同，请根据自己所使用的NAND FALSH数据手册来编写函数
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//返回值:NAND FLASH的ID值
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u32 NAND_ReadID(void)
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{
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u8 deviceid[5];
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u32 id;
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*(vu8*)(NAND_ADDRESS|NAND_CMD)=NAND_READID; //发送读取ID命令
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*(vu8*)(NAND_ADDRESS|NAND_ADDR)=0X00;
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//NOP指令E用于CPU空转延时，共60ns, tWHR
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NAND_Delay(NAND_TWHR_DELAY);
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//ID一共有5个字节
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deviceid[0]=*(vu8*)NAND_ADDRESS;
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deviceid[1]=*(vu8*)NAND_ADDRESS;
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deviceid[2]=*(vu8*)NAND_ADDRESS;
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deviceid[3]=*(vu8*)NAND_ADDRESS;
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deviceid[4]=*(vu8*)NAND_ADDRESS;
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//镁光的NAND FLASH的ID一共5个字节，但是为了方便我们只取4个字节组成一个32位的ID值
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//根据NAND FLASH的数据手册，只要是镁光的NAND FLASH，那么一个字节ID的第一个字节都是0X2C
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//所以我们就可以抛弃这个0X2C，只取后面四字节的ID值。
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id=((u32)deviceid[1])<<24|((u32)deviceid[2])<<16|((u32)deviceid[3])<<8|deviceid[4];
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if(NAND_WaitForReady()==NSTA_READY)return id;//成功
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else return 0xFFFFFFFF;
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//return id;
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}
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//读NAND状态
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//返回值:NAND状态值
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//bit0:0,成功;1,错误(编程/擦除/READ)
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//bit6:0,Busy;1,Ready
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u8 NAND_ReadStatus(void)
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{
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vu8 data=0;
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*(vu8*)(NAND_ADDRESS|NAND_CMD)=NAND_READSTA;//发送读状态命令
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NAND_Delay(NAND_TWHR_DELAY); //等待tWHR,再读取状态寄存器
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data=*(vu8*)NAND_ADDRESS; //读取状态值
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return data;
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}
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//等待NAND准备好
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//返回值:NSTA_TIMEOUT 等待超时了
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// NSTA_READY 已经准备好
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u8 NAND_WaitForReady(void)
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{
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u8 status=0;
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vu32 time=0;
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while(1) //等待ready
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{
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status=NAND_ReadStatus(); //获取状态值
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if(status&NSTA_READY)break;
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time++;
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if(time>=0X1FFFF)return NSTA_TIMEOUT;//超时
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}
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return NSTA_READY;//准备好
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}
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//复位NAND
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//返回值:0,成功;
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// 其他,失败
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u8 NAND_Reset(void)
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{
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*(vu8*)(NAND_ADDRESS|NAND_CMD)=NAND_RESET; //复位NAND
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/* 镁光需要等100ns的tWB+100us的tRST */
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delay_ms(NAND_TRST_FIRST_DELAY);
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if(NAND_WaitForReady()==NSTA_READY)return 0;//复位成功
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else return 1; //复位失败
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}
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//等待RB信号为某个电平
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//rb:0,等待RB==0
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// 1,等待RB==1
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//返回值:0,成功
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// 1,超时
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u8 NAND_WaitRB(vu8 rb)
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{
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vu32 time=0;
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vu8 cnt=0;
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while(time<0X1FFFFFF)
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{
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time++;
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if(NAND_RB==rb)
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{
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cnt++;
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}else cnt=0;
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if(cnt>2)return 0;//连续三次读取都是正确的有效电平,则认为此次数据有效!(否则-O2优化出问题!)
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}
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return 1;
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}
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//NAND延时
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void NAND_Delay(vu32 i)
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{
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while(i>0)i--;
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}
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//读取NAND Flash的指定页指定列的数据(main区和spare区都可以使用此函数)
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//PageNum:要读取的页地址,范围:0~(block_pagenum*block_totalnum-1)
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//ColNum:要读取的列开始地址(也就是页内地址),范围:0~(page_totalsize-1)
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//*pBuffer:指向数据存储区
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//NumByteToRead:读取字节数(不能跨页读)
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//返回值:0,成功
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// 其他,错误代码
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u8 NAND_ReadPage(u32 PageNum,u16 ColNum,u8 *pBuffer,u16 NumByteToRead)
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{
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vu16 i=0;
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u8 res=0;
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u8 eccnum=0; //需要计算的ECC个数，每NAND_ECC_SECTOR_SIZE字节计算一个ecc
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u8 eccstart=0; //第一个ECC值所属的地址范围
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u8 errsta=0;
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u8 *p;
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*(vu8*)(NAND_ADDRESS|NAND_CMD)=NAND_AREA_A;
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//发送地址
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*(vu8*)(NAND_ADDRESS|NAND_ADDR)=(u8)ColNum;
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*(vu8*)(NAND_ADDRESS|NAND_ADDR)=(u8)(ColNum>>8);
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*(vu8*)(NAND_ADDRESS|NAND_ADDR)=(u8)PageNum;
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*(vu8*)(NAND_ADDRESS|NAND_ADDR)=(u8)(PageNum>>8);
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*(vu8*)(NAND_ADDRESS|NAND_ADDR)=(u8)(PageNum>>16);
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*(vu8*)(NAND_ADDRESS|NAND_CMD)=NAND_AREA_TRUE1;
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//下面两行代码是等待R/B引脚变为低电平，其实主要起延时作用的，等待NAND操作R/B引脚。因为我们是通过
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//将STM32的NWAIT引脚(NAND的R/B引脚)配置为普通IO，代码中通过读取NWAIT引脚的电平来判断NAND是否准备
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//就绪的。这个也就是模拟的方法，所以在速度很快的时候有可能NAND还没来得及操作R/B引脚来表示NAND的忙
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//闲状态，结果我们就读取了R/B引脚,这个时候肯定会出错的，事实上确实是会出错!大家也可以将下面两行
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//代码换成延时函数,只不过这里我们为了效率所以没有用延时函数。
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res=NAND_WaitRB(0); //等待RB=0
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if(res)return NSTA_TIMEOUT; //超时退出
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//下面2行代码是真正判断NAND是否准备好的
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res=NAND_WaitRB(1); //等待RB=1
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if(res)return NSTA_TIMEOUT; //超时退出
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if(NumByteToRead%NAND_ECC_SECTOR_SIZE)//不是NAND_ECC_SECTOR_SIZE的整数倍，不进行ECC校验
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{
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//读取NAND FLASH中的值
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for(i=0;i<NumByteToRead;i++)
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{
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*(vu8*)pBuffer++ = *(vu8*)NAND_ADDRESS;
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}
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}else
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{
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eccnum=NumByteToRead/NAND_ECC_SECTOR_SIZE; //得到ecc计算次数
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eccstart=ColNum/NAND_ECC_SECTOR_SIZE;
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p=pBuffer;
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for(res=0;res<eccnum;res++)
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{
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SCB_CleanInvalidateDCache(); //清除无效的D-Cache
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FMC_NAND_DEVICE->PCR|=1<<6; //使能ECC校验
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for(i=0;i<NAND_ECC_SECTOR_SIZE;i++) //读取NAND_ECC_SECTOR_SIZE个数据
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{
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*(vu8*)pBuffer++ = *(vu8*)NAND_ADDRESS;
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}
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while(!(FMC_NAND_DEVICE->SR&(1<<6))); //等待FIFO空
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SCB_CleanInvalidateDCache(); //清除无效的D-Cache
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nand_dev.ecc_hdbuf[res+eccstart]=FMC_NAND_DEVICE->ECCR;//读取硬件计算后的ECC值
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FMC_NAND_DEVICE->PCR&=~(1<<6); //禁止ECC校验
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}
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i=nand_dev.page_mainsize+0X10+eccstart*4; //从spare区的0X10位置开始读取之前存储的ecc值
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NAND_Delay(NAND_TRHW_DELAY);//等待tRHW
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*(vu8*)(NAND_ADDRESS|NAND_CMD)=0X05; //随机读指令
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//发送地址
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*(vu8*)(NAND_ADDRESS|NAND_ADDR)=(u8)i;
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*(vu8*)(NAND_ADDRESS|NAND_ADDR)=(u8)(i>>8);
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*(vu8*)(NAND_ADDRESS|NAND_CMD)=0XE0; //开始读数据
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NAND_Delay(NAND_TWHR_DELAY);//等待tWHR
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pBuffer=(u8*)&nand_dev.ecc_rdbuf[eccstart];
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SCB_CleanInvalidateDCache(); //清除无效的D-Cache
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for(i=0;i<4*eccnum;i++) //读取保存的ECC值
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{
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*(vu8*)pBuffer++= *(vu8*)NAND_ADDRESS;
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}
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for(i=0;i<eccnum;i++) //检验ECC
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{
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if(nand_dev.ecc_rdbuf[i+eccstart]!=nand_dev.ecc_hdbuf[i+eccstart])//不相等,需要校正
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{
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printf("err hd,rd:0x%x,0x%x\r\n",nand_dev.ecc_hdbuf[i+eccstart],nand_dev.ecc_rdbuf[i+eccstart]);
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printf("eccnum,eccstart:%d,%d\r\n",eccnum,eccstart);
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printf("PageNum,ColNum:%d,%d\r\n",PageNum,ColNum);
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res=NAND_ECC_Correction(p+NAND_ECC_SECTOR_SIZE*i,nand_dev.ecc_rdbuf[i+eccstart],nand_dev.ecc_hdbuf[i+eccstart]);//ECC校验
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if(res)errsta=NSTA_ECC2BITERR; //标记2BIT及以上ECC错误
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else errsta=NSTA_ECC1BITERR; //标记1BIT ECC错误
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}
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}
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}
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if(NAND_WaitForReady()!=NSTA_READY)errsta=NSTA_ERROR; //失败
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return errsta; //成功
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}
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//读取NAND Flash的指定页指定列的数据(main区和spare区都可以使用此函数),并对比(FTL管理时需要)
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//PageNum:要读取的页地址,范围:0~(block_pagenum*block_totalnum-1)
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//ColNum:要读取的列开始地址(也就是页内地址),范围:0~(page_totalsize-1)
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//CmpVal:要对比的值,以u32为单位
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//NumByteToRead:读取字数(以4字节为单位,不能跨页读)
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//NumByteEqual:从初始位置持续与CmpVal值相同的数据个数
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//返回值:0,成功
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// 其他,错误代码
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u8 NAND_ReadPageComp(u32 PageNum,u16 ColNum,u32 CmpVal,u16 NumByteToRead,u16 *NumByteEqual)
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{
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u16 i=0;
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u8 res=0;
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*(vu8*)(NAND_ADDRESS|NAND_CMD)=NAND_AREA_A;
|
||
//发送地址
|
||
*(vu8*)(NAND_ADDRESS|NAND_ADDR)=(u8)ColNum;
|
||
*(vu8*)(NAND_ADDRESS|NAND_ADDR)=(u8)(ColNum>>8);
|
||
*(vu8*)(NAND_ADDRESS|NAND_ADDR)=(u8)PageNum;
|
||
*(vu8*)(NAND_ADDRESS|NAND_ADDR)=(u8)(PageNum>>8);
|
||
*(vu8*)(NAND_ADDRESS|NAND_ADDR)=(u8)(PageNum>>16);
|
||
*(vu8*)(NAND_ADDRESS|NAND_CMD)=NAND_AREA_TRUE1;
|
||
//下面两行代码是等待R/B引脚变为低电平，其实主要起延时作用的，等待NAND操作R/B引脚。因为我们是通过
|
||
//将STM32的NWAIT引脚(NAND的R/B引脚)配置为普通IO，代码中通过读取NWAIT引脚的电平来判断NAND是否准备
|
||
//就绪的。这个也就是模拟的方法，所以在速度很快的时候有可能NAND还没来得及操作R/B引脚来表示NAND的忙
|
||
//闲状态，结果我们就读取了R/B引脚,这个时候肯定会出错的，事实上确实是会出错!大家也可以将下面两行
|
||
//代码换成延时函数,只不过这里我们为了效率所以没有用延时函数。
|
||
res=NAND_WaitRB(0); //等待RB=0
|
||
if(res)return NSTA_TIMEOUT; //超时退出
|
||
//下面2行代码是真正判断NAND是否准备好的
|
||
res=NAND_WaitRB(1); //等待RB=1
|
||
if(res)return NSTA_TIMEOUT; //超时退出
|
||
SCB_CleanInvalidateDCache();//清除无效的D-Cache
|
||
for(i=0;i<NumByteToRead;i++)//读取数据,每次读4字节
|
||
{
|
||
if(*(vu32*)NAND_ADDRESS!=CmpVal)break; //如果有任何一个值,与CmpVal不相等,则退出.
|
||
}
|
||
*NumByteEqual=i; //与CmpVal值相同的个数
|
||
if(NAND_WaitForReady()!=NSTA_READY)return NSTA_ERROR;//失败
|
||
return 0; //成功
|
||
}
|
||
|
||
//在NAND一页中写入指定个字节的数据(main区和spare区都可以使用此函数)
|
||
//PageNum:要写入的页地址,范围:0~(block_pagenum*block_totalnum-1)
|
||
//ColNum:要写入的列开始地址(也就是页内地址),范围:0~(page_totalsize-1)
|
||
//pBbuffer:指向数据存储区
|
||
//NumByteToWrite:要写入的字节数，该值不能超过该页剩余字节数！！！
|
||
//返回值:0,成功
|
||
// 其他,错误代码
|
||
u8 NAND_WritePage(u32 PageNum,u16 ColNum,u8 *pBuffer,u16 NumByteToWrite)
|
||
{
|
||
vu16 i=0;
|
||
u8 res=0;
|
||
u8 eccnum=0; //需要计算的ECC个数，每NAND_ECC_SECTOR_SIZE字节计算一个ecc
|
||
u8 eccstart=0; //第一个ECC值所属的地址范围
|
||
|
||
*(vu8*)(NAND_ADDRESS|NAND_CMD)=NAND_WRITE0;
|
||
//发送地址
|
||
*(vu8*)(NAND_ADDRESS|NAND_ADDR)=(u8)ColNum;
|
||
*(vu8*)(NAND_ADDRESS|NAND_ADDR)=(u8)(ColNum>>8);
|
||
*(vu8*)(NAND_ADDRESS|NAND_ADDR)=(u8)PageNum;
|
||
*(vu8*)(NAND_ADDRESS|NAND_ADDR)=(u8)(PageNum>>8);
|
||
*(vu8*)(NAND_ADDRESS|NAND_ADDR)=(u8)(PageNum>>16);
|
||
NAND_Delay(NAND_TADL_DELAY); //等待tADL
|
||
if(NumByteToWrite%NAND_ECC_SECTOR_SIZE) //不是NAND_ECC_SECTOR_SIZE的整数倍，不进行ECC校验
|
||
{
|
||
for(i=0;i<NumByteToWrite;i++) //写入数据
|
||
{
|
||
*(vu8*)NAND_ADDRESS=*(vu8*)pBuffer++;
|
||
}
|
||
}else
|
||
{
|
||
eccnum=NumByteToWrite/NAND_ECC_SECTOR_SIZE; //得到ecc计算次数
|
||
eccstart=ColNum/NAND_ECC_SECTOR_SIZE;
|
||
for(res=0;res<eccnum;res++)
|
||
{
|
||
SCB_CleanInvalidateDCache(); //清除无效的D-Cache
|
||
FMC_NAND_DEVICE->PCR|=1<<6; //使能ECC校验
|
||
for(i=0;i<NAND_ECC_SECTOR_SIZE;i++) //写入NAND_ECC_SECTOR_SIZE个数据
|
||
{
|
||
*(vu8*)NAND_ADDRESS=*(vu8*)pBuffer++;
|
||
}
|
||
while(!(FMC_NAND_DEVICE->SR&(1<<6))); //等待FIFO空
|
||
SCB_CleanInvalidateDCache(); //清除无效的D-Cache
|
||
nand_dev.ecc_hdbuf[res+eccstart]=FMC_NAND_DEVICE->ECCR; //读取硬件计算后的ECC值
|
||
FMC_NAND_DEVICE->PCR&=~(1<<6); //禁止ECC校验
|
||
}
|
||
i=nand_dev.page_mainsize+0X10+eccstart*4; //计算写入ECC的spare区地址
|
||
NAND_Delay(NAND_TADL_DELAY);//等待
|
||
*(vu8*)(NAND_ADDRESS|NAND_CMD)=0X85; //随机写指令
|
||
//发送地址
|
||
*(vu8*)(NAND_ADDRESS|NAND_ADDR)=(u8)i;
|
||
*(vu8*)(NAND_ADDRESS|NAND_ADDR)=(u8)(i>>8);
|
||
NAND_Delay(NAND_TADL_DELAY);//等待tADL
|
||
pBuffer=(u8*)&nand_dev.ecc_hdbuf[eccstart];
|
||
for(i=0;i<eccnum;i++) //写入ECC
|
||
{
|
||
for(res=0;res<4;res++)
|
||
{
|
||
*(vu8*)NAND_ADDRESS=*(vu8*)pBuffer++;
|
||
}
|
||
}
|
||
}
|
||
*(vu8*)(NAND_ADDRESS|NAND_CMD)=NAND_WRITE_TURE1;
|
||
//delay_us(NAND_TPROG_DELAY); //等待tPROG
|
||
HAL_Delay(1);
|
||
if(NAND_WaitForReady()!=NSTA_READY)return NSTA_ERROR;//失败
|
||
return 0;//成功
|
||
}
|
||
//在NAND一页中的指定地址开始,写入指定长度的恒定数字
|
||
//PageNum:要写入的页地址,范围:0~(block_pagenum*block_totalnum-1)
|
||
//ColNum:要写入的列开始地址(也就是页内地址),范围:0~(page_totalsize-1)
|
||
//cval:要写入的指定常数
|
||
//NumByteToWrite:要写入的字数(以4字节为单位)
|
||
//返回值:0,成功
|
||
// 其他,错误代码
|
||
u8 NAND_WritePageConst(u32 PageNum,u16 ColNum,u32 cval,u16 NumByteToWrite)
|
||
{
|
||
u16 i=0;
|
||
*(vu8*)(NAND_ADDRESS|NAND_CMD)=NAND_WRITE0;
|
||
//发送地址
|
||
*(vu8*)(NAND_ADDRESS|NAND_ADDR)=(u8)ColNum;
|
||
*(vu8*)(NAND_ADDRESS|NAND_ADDR)=(u8)(ColNum>>8);
|
||
*(vu8*)(NAND_ADDRESS|NAND_ADDR)=(u8)PageNum;
|
||
*(vu8*)(NAND_ADDRESS|NAND_ADDR)=(u8)(PageNum>>8);
|
||
*(vu8*)(NAND_ADDRESS|NAND_ADDR)=(u8)(PageNum>>16);
|
||
NAND_Delay(NAND_TADL_DELAY); //等待tADL
|
||
for(i=0;i<NumByteToWrite;i++) //写入数据,每次写4字节
|
||
{
|
||
*(vu32*)NAND_ADDRESS=cval;
|
||
}
|
||
*(vu8*)(NAND_ADDRESS|NAND_CMD)=NAND_WRITE_TURE1;
|
||
//delay_us(NAND_TPROG_DELAY); //等待tPROG
|
||
HAL_Delay(1);
|
||
if(NAND_WaitForReady()!=NSTA_READY)return NSTA_ERROR;//失败
|
||
return 0;//成功
|
||
}
|
||
//将一页数据拷贝到另一页,不写入新数据
|
||
//注意:源页和目的页要在同一个Plane内！
|
||
//Source_PageNo:源页地址,范围:0~(block_pagenum*block_totalnum-1)
|
||
//Dest_PageNo:目的页地址,范围:0~(block_pagenum*block_totalnum-1)
|
||
//返回值:0,成功
|
||
// 其他,错误代码
|
||
u8 NAND_CopyPageWithoutWrite(u32 Source_PageNum,u32 Dest_PageNum)
|
||
{
|
||
u8 res=0;
|
||
u16 source_block=0,dest_block=0;
|
||
//判断源页和目的页是否在同一个plane中
|
||
source_block=Source_PageNum/nand_dev.block_pagenum;
|
||
dest_block=Dest_PageNum/nand_dev.block_pagenum;
|
||
if((source_block%2)!=(dest_block%2))return NSTA_ERROR; //不在同一个plane内
|
||
*(vu8*)(NAND_ADDRESS|NAND_CMD)=NAND_MOVEDATA_CMD0; //发送命令0X00
|
||
//发送源页地址
|
||
*(vu8*)(NAND_ADDRESS|NAND_ADDR)=(u8)0;
|
||
*(vu8*)(NAND_ADDRESS|NAND_ADDR)=(u8)0;
|
||
*(vu8*)(NAND_ADDRESS|NAND_ADDR)=(u8)Source_PageNum;
|
||
*(vu8*)(NAND_ADDRESS|NAND_ADDR)=(u8)(Source_PageNum>>8);
|
||
*(vu8*)(NAND_ADDRESS|NAND_ADDR)=(u8)(Source_PageNum>>16);
|
||
*(vu8*)(NAND_ADDRESS|NAND_CMD)=NAND_MOVEDATA_CMD1;//发送命令0X35
|
||
//下面两行代码是等待R/B引脚变为低电平，其实主要起延时作用的，等待NAND操作R/B引脚。因为我们是通过
|
||
//将STM32的NWAIT引脚(NAND的R/B引脚)配置为普通IO，代码中通过读取NWAIT引脚的电平来判断NAND是否准备
|
||
//就绪的。这个也就是模拟的方法，所以在速度很快的时候有可能NAND还没来得及操作R/B引脚来表示NAND的忙
|
||
//闲状态，结果我们就读取了R/B引脚,这个时候肯定会出错的，事实上确实是会出错!大家也可以将下面两行
|
||
//代码换成延时函数,只不过这里我们为了效率所以没有用延时函数。
|
||
res=NAND_WaitRB(0); //等待RB=0
|
||
if(res)return NSTA_TIMEOUT; //超时退出
|
||
//下面2行代码是真正判断NAND是否准备好的
|
||
res=NAND_WaitRB(1); //等待RB=1
|
||
if(res)return NSTA_TIMEOUT; //超时退出
|
||
*(vu8*)(NAND_ADDRESS|NAND_CMD)=NAND_MOVEDATA_CMD2; //发送命令0X85
|
||
//发送目的页地址
|
||
*(vu8*)(NAND_ADDRESS|NAND_ADDR)=(u8)0;
|
||
*(vu8*)(NAND_ADDRESS|NAND_ADDR)=(u8)0;
|
||
*(vu8*)(NAND_ADDRESS|NAND_ADDR)=(u8)Dest_PageNum;
|
||
*(vu8*)(NAND_ADDRESS|NAND_ADDR)=(u8)(Dest_PageNum>>8);
|
||
*(vu8*)(NAND_ADDRESS|NAND_ADDR)=(u8)(Dest_PageNum>>16);
|
||
NAND_Delay(NAND_TWHR_DELAY);//等待tWHR
|
||
*(vu8*)(NAND_ADDRESS|NAND_CMD)=NAND_MOVEDATA_CMD3; //发送命令0X10
|
||
//delay_us(NAND_TPROG_DELAY); //等待tPROG
|
||
HAL_Delay(1);
|
||
if(NAND_WaitForReady()!=NSTA_READY)return NSTA_ERROR; //NAND未准备好
|
||
return 0;//成功
|
||
}
|
||
|
||
//将一页数据拷贝到另一页,并且可以写入数据
|
||
//注意:源页和目的页要在同一个Plane内！
|
||
//Source_PageNo:源页地址,范围:0~(block_pagenum*block_totalnum-1)
|
||
//Dest_PageNo:目的页地址,范围:0~(block_pagenum*block_totalnum-1)
|
||
//ColNo:页内列地址,范围:0~(page_totalsize-1)
|
||
//pBuffer:要写入的数据
|
||
//NumByteToWrite:要写入的数据个数
|
||
//返回值:0,成功
|
||
// 其他,错误代码
|
||
u8 NAND_CopyPageWithWrite(u32 Source_PageNum,u32 Dest_PageNum,u16 ColNum,u8 *pBuffer,u16 NumByteToWrite)
|
||
{
|
||
u8 res=0;
|
||
vu16 i=0;
|
||
u16 source_block=0,dest_block=0;
|
||
u8 eccnum=0; //需要计算的ECC个数，每NAND_ECC_SECTOR_SIZE字节计算一个ecc
|
||
u8 eccstart=0; //第一个ECC值所属的地址范围
|
||
//判断源页和目的页是否在同一个plane中
|
||
source_block=Source_PageNum/nand_dev.block_pagenum;
|
||
dest_block=Dest_PageNum/nand_dev.block_pagenum;
|
||
if((source_block%2)!=(dest_block%2))return NSTA_ERROR;//不在同一个plane内
|
||
*(vu8*)(NAND_ADDRESS|NAND_CMD)=NAND_MOVEDATA_CMD0; //发送命令0X00
|
||
//发送源页地址
|
||
*(vu8*)(NAND_ADDRESS|NAND_ADDR)=(u8)0;
|
||
*(vu8*)(NAND_ADDRESS|NAND_ADDR)=(u8)0;
|
||
*(vu8*)(NAND_ADDRESS|NAND_ADDR)=(u8)Source_PageNum;
|
||
*(vu8*)(NAND_ADDRESS|NAND_ADDR)=(u8)(Source_PageNum>>8);
|
||
*(vu8*)(NAND_ADDRESS|NAND_ADDR)=(u8)(Source_PageNum>>16);
|
||
*(vu8*)(NAND_ADDRESS|NAND_CMD)=NAND_MOVEDATA_CMD1; //发送命令0X35
|
||
|
||
//下面两行代码是等待R/B引脚变为低电平，其实主要起延时作用的，等待NAND操作R/B引脚。因为我们是通过
|
||
//将STM32的NWAIT引脚(NAND的R/B引脚)配置为普通IO，代码中通过读取NWAIT引脚的电平来判断NAND是否准备
|
||
//就绪的。这个也就是模拟的方法，所以在速度很快的时候有可能NAND还没来得及操作R/B引脚来表示NAND的忙
|
||
//闲状态，结果我们就读取了R/B引脚,这个时候肯定会出错的，事实上确实是会出错!大家也可以将下面两行
|
||
//代码换成延时函数,只不过这里我们为了效率所以没有用延时函数。
|
||
res=NAND_WaitRB(0); //等待RB=0
|
||
if(res)return NSTA_TIMEOUT; //超时退出
|
||
//下面2行代码是真正判断NAND是否准备好的
|
||
res=NAND_WaitRB(1); //等待RB=1
|
||
if(res)return NSTA_TIMEOUT; //超时退出
|
||
*(vu8*)(NAND_ADDRESS|NAND_CMD)=NAND_MOVEDATA_CMD2; //发送命令0X85
|
||
//发送目的页地址
|
||
*(vu8*)(NAND_ADDRESS|NAND_ADDR)=(u8)ColNum;
|
||
*(vu8*)(NAND_ADDRESS|NAND_ADDR)=(u8)(ColNum>>8);
|
||
*(vu8*)(NAND_ADDRESS|NAND_ADDR)=(u8)Dest_PageNum;
|
||
*(vu8*)(NAND_ADDRESS|NAND_ADDR)=(u8)(Dest_PageNum>>8);
|
||
*(vu8*)(NAND_ADDRESS|NAND_ADDR)=(u8)(Dest_PageNum>>16);
|
||
//发送页内列地址
|
||
NAND_Delay(30);//等待tADL
|
||
if(NumByteToWrite%NAND_ECC_SECTOR_SIZE)//不是NAND_ECC_SECTOR_SIZE的整数倍，不进行ECC校验
|
||
{
|
||
SCB_CleanInvalidateDCache(); //清除无效的D-Cache
|
||
for(i=0;i<NumByteToWrite;i++) //写入数据
|
||
{
|
||
*(vu8*)NAND_ADDRESS=*(vu8*)pBuffer++;
|
||
}
|
||
}else
|
||
{
|
||
eccnum=NumByteToWrite/NAND_ECC_SECTOR_SIZE; //得到ecc计算次数
|
||
eccstart=ColNum/NAND_ECC_SECTOR_SIZE;
|
||
for(res=0;res<eccnum;res++)
|
||
{
|
||
SCB_CleanInvalidateDCache(); //清除无效的D-Cache
|
||
FMC_NAND_DEVICE->PCR|=1<<6; //使能ECC校验
|
||
for(i=0;i<NAND_ECC_SECTOR_SIZE;i++) //写入NAND_ECC_SECTOR_SIZE个数据
|
||
{
|
||
*(vu8*)NAND_ADDRESS=*(vu8*)pBuffer++;
|
||
}
|
||
while(!(FMC_NAND_DEVICE->SR&(1<<6))); //等待FIFO空
|
||
SCB_CleanInvalidateDCache(); //清除无效的D-Cache
|
||
nand_dev.ecc_hdbuf[res+eccstart]=FMC_NAND_DEVICE->ECCR; //读取硬件计算后的ECC值
|
||
FMC_NAND_DEVICE->PCR&=~(1<<6); //禁止ECC校验
|
||
}
|
||
i=nand_dev.page_mainsize+0X10+eccstart*4; //计算写入ECC的spare区地址
|
||
NAND_Delay(NAND_TADL_DELAY);//等待
|
||
*(vu8*)(NAND_ADDRESS|NAND_CMD)=0X85; //随机写指令
|
||
//发送地址
|
||
*(vu8*)(NAND_ADDRESS|NAND_ADDR)=(u8)i;
|
||
*(vu8*)(NAND_ADDRESS|NAND_ADDR)=(u8)(i>>8);
|
||
NAND_Delay(NAND_TADL_DELAY);//等待tADL
|
||
pBuffer=(u8*)&nand_dev.ecc_hdbuf[eccstart];
|
||
for(i=0;i<eccnum;i++) //写入ECC
|
||
{
|
||
SCB_CleanInvalidateDCache(); //清除无效的D-Cache
|
||
for(res=0;res<4;res++)
|
||
{
|
||
*(vu8*)NAND_ADDRESS=*(vu8*)pBuffer++;
|
||
}
|
||
}
|
||
}
|
||
*(vu8*)(NAND_ADDRESS|NAND_CMD)=NAND_MOVEDATA_CMD3; //发送命令0X10
|
||
//delay_us(NAND_TPROG_DELAY); //等待tPROG
|
||
HAL_Delay(1);
|
||
if(NAND_WaitForReady()!=NSTA_READY)return NSTA_ERROR; //失败
|
||
return 0; //成功
|
||
}
|
||
|
||
//读取spare区中的数据
|
||
//PageNum:要写入的页地址,范围:0~(block_pagenum*block_totalnum-1)
|
||
//ColNum:要写入的spare区地址(spare区中哪个地址),范围:0~(page_sparesize-1)
|
||
//pBuffer:接收数据缓冲区
|
||
//NumByteToRead:要读取的字节数(不大于page_sparesize)
|
||
//返回值:0,成功
|
||
// 其他,错误代码
|
||
u8 NAND_ReadSpare(u32 PageNum,u16 ColNum,u8 *pBuffer,u16 NumByteToRead)
|
||
{
|
||
u8 temp=0;
|
||
u8 remainbyte=0;
|
||
remainbyte=nand_dev.page_sparesize-ColNum;
|
||
if(NumByteToRead>remainbyte) NumByteToRead=remainbyte; //确保要写入的字节数不大于spare剩余的大小
|
||
temp=NAND_ReadPage(PageNum,ColNum+nand_dev.page_mainsize,pBuffer,NumByteToRead);//读取数据
|
||
return temp;
|
||
}
|
||
//向spare区中写数据
|
||
//PageNum:要写入的页地址,范围:0~(block_pagenum*block_totalnum-1)
|
||
//ColNum:要写入的spare区地址(spare区中哪个地址),范围:0~(page_sparesize-1)
|
||
//pBuffer:要写入的数据首地址
|
||
//NumByteToWrite:要写入的字节数(不大于page_sparesize)
|
||
//返回值:0,成功
|
||
// 其他,失败
|
||
u8 NAND_WriteSpare(u32 PageNum,u16 ColNum,u8 *pBuffer,u16 NumByteToWrite)
|
||
{
|
||
u8 temp=0;
|
||
u8 remainbyte=0;
|
||
remainbyte=nand_dev.page_sparesize-ColNum;
|
||
if(NumByteToWrite>remainbyte) NumByteToWrite=remainbyte; //确保要读取的字节数不大于spare剩余的大小
|
||
temp=NAND_WritePage(PageNum,ColNum+nand_dev.page_mainsize,pBuffer,NumByteToWrite);//读取
|
||
return temp;
|
||
}
|
||
//擦除一个块
|
||
//BlockNum:要擦除的BLOCK编号,范围:0-(block_totalnum-1)
|
||
//返回值:0,擦除成功
|
||
// 其他,擦除失败
|
||
u8 NAND_EraseBlock(u32 BlockNum)
|
||
{
|
||
if(nand_dev.id==MT29F16G08ABABA)BlockNum<<=7; //将块地址转换为页地址
|
||
else if(nand_dev.id==MT29F4G08ABADA)BlockNum<<=6;
|
||
*(vu8*)(NAND_ADDRESS|NAND_CMD)=NAND_ERASE0;
|
||
//发送块地址
|
||
*(vu8*)(NAND_ADDRESS|NAND_ADDR)=(u8)BlockNum;
|
||
*(vu8*)(NAND_ADDRESS|NAND_ADDR)=(u8)(BlockNum>>8);
|
||
*(vu8*)(NAND_ADDRESS|NAND_ADDR)=(u8)(BlockNum>>16);
|
||
*(vu8*)(NAND_ADDRESS|NAND_CMD)=NAND_ERASE1;
|
||
delay_ms(NAND_TBERS_DELAY); //等待擦除成功
|
||
if(NAND_WaitForReady()!=NSTA_READY)return NSTA_ERROR;//失败
|
||
return 0; //成功
|
||
}
|
||
//全片擦除NAND FLASH
|
||
void NAND_EraseChip(void)
|
||
{
|
||
u8 status;
|
||
u16 i=0;
|
||
for(i=0;i<nand_dev.block_totalnum;i++) //循环擦除所有的块
|
||
{
|
||
status=NAND_EraseBlock(i);
|
||
if(status)printf("Erase %d block fail!!，错误码为%d\r\n",i,status);//擦除失败
|
||
}
|
||
}
|
||
|
||
//获取ECC的奇数位/偶数位
|
||
//oe:0,偶数位
|
||
// 1,奇数位
|
||
//eccval:输入的ecc值
|
||
//返回值:计算后的ecc值(最多16位)
|
||
u16 NAND_ECC_Get_OE(u8 oe,u32 eccval)
|
||
{
|
||
u8 i;
|
||
u16 ecctemp=0;
|
||
for(i=0;i<24;i++)
|
||
{
|
||
if((i%2)==oe)
|
||
{
|
||
if((eccval>>i)&0X01)ecctemp+=1<<(i>>1);
|
||
}
|
||
}
|
||
return ecctemp;
|
||
}
|
||
//ECC校正函数
|
||
//eccrd:读取出来,原来保存的ECC值
|
||
//ecccl:读取数据时,硬件计算的ECC只
|
||
//返回值:0,错误已修正
|
||
// 其他,ECC错误(有大于2个bit的错误,无法恢复)
|
||
u8 NAND_ECC_Correction(u8* data_buf,u32 eccrd,u32 ecccl)
|
||
{
|
||
u16 eccrdo,eccrde,eccclo,ecccle;
|
||
u16 eccchk=0;
|
||
u16 errorpos=0;
|
||
u32 bytepos=0;
|
||
eccrdo=NAND_ECC_Get_OE(1,eccrd); //获取eccrd的奇数位
|
||
eccrde=NAND_ECC_Get_OE(0,eccrd); //获取eccrd的偶数位
|
||
eccclo=NAND_ECC_Get_OE(1,ecccl); //获取ecccl的奇数位
|
||
ecccle=NAND_ECC_Get_OE(0,ecccl); //获取ecccl的偶数位
|
||
eccchk=eccrdo^eccrde^eccclo^ecccle;
|
||
if(eccchk==0XFFF) //全1,说明只有1bit ECC错误
|
||
{
|
||
errorpos=eccrdo^eccclo;
|
||
printf("errorpos:%d\r\n",errorpos);
|
||
bytepos=errorpos/8;
|
||
data_buf[bytepos]^=1<<(errorpos%8);
|
||
}else //不是全1,说明至少有2bit ECC错误,无法修复
|
||
{
|
||
printf("2bit ecc error or more\r\n");
|
||
return 1;
|
||
}
|
||
return 0;
|
||
}
|