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2025-06-27 00:32:57 +08:00
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#ifndef __OPENLOONGSON_SDRAM_CFG_H
#define __OPENLOONGSON_SDRAM_CFG_H
//#define SD_FREQ (6 * PLL_M) / (2 * SDRAM_PARAM_DIV_NUM)
#define SD_FREQ (((APB_CLK / 4) * (PLL_MULT / CPU_DIV)) / SDRAM_PARAM_DIV_NUM)
/* 颗粒行数 */
#define ROW_1K 0x7
#define ROW_2K 0x0
#define ROW_4K 0x1
#define ROW_8K 0x2
#define ROW_16K 0x3
/* 颗粒列数 */
#define COL_256 0x7
#define COL_512 0x0
#define COL_1K 0x1
#define COL_2K 0x2
#define COL_4K 0x3
/* 颗粒位宽 */
#define WIDTH_8 0x0
#define WIDTH_16 0x1
#define WIDTH_32 0x2
#define TRCD 3
#define TCL 3
#define TRP 3
#define TRFC 8
#define TRAS 6
#define TREF 0x818
#define TWR 2
#define DEF_SEL 0x1
#define DEF_SEL_N 0x0
#define HANG_UP 0x1
#define HANG_UP_N 0x0
#define CFG_VALID 0x1
#if 0
// 白菜板8MB
/*
以型号为IS42S16400的SDRAM为例
物理参数为,
容量8MB
位宽16位
列宽8位即2的8次方即256
行宽12位即2的12次方即4K
所以,
颗粒的位宽=WIDTH_16
颗粒的列数=COL_256
颗粒的行数=ROW_4K
再结合宏SD_PARA0和芯片手册中寄存器SD_CONFIG相信一看就能明白
替换宏SD_PARA0中的行宽、列宽和位宽
*/
#define SDRAM_WIDTH (WIDTH_16)
#define SDRAM_COL (COL_256)
#define SDRAM_ROW (ROW_4K)
#else
// 智龙32MByte
#define SDRAM_WIDTH (WIDTH_16)
#define SDRAM_COL (COL_512)
#define SDRAM_ROW (ROW_8K)
#endif
#define SD_PARA0 (0x7f<<25 | \
(TRAS << 21) | \
(TRFC << 17) | (TRP << 14) | (TCL << 11) | \
(TRCD << 8) | (SDRAM_WIDTH << 6) | (SDRAM_COL << 3) | \
SDRAM_ROW)
#define SD_PARA1 ((HANG_UP_N << 8) | (DEF_SEL_N << 7) | (TWR << 5) | (TREF >> 7))
#define SD_PARA1_EN ((CFG_VALID << 9) | (HANG_UP_N << 8) | \
(DEF_SEL_N << 7) | (TWR << 5) | (TREF >> 7))
#endif